Extraction of passive device model parameters using genetic algorithms

被引:9
作者
Yun, I [1 ]
Carastro, LA
Poddar, R
Brooke, MA
May, GS
Hyun, KS
Pyun, KE
机构
[1] Elect & Telecommun Res Inst, Taejon 305606, South Korea
[2] Georgia Inst Technol, Sch Elect & Comp Engn, Atlanta, GA 30332 USA
[3] Georgia Inst Technol, Microelect Res Ctr, Atlanta, GA 30332 USA
关键词
D O I
10.4218/etrij.00.0100.0105
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The extraction of model parameters for embedded passive components is crucial for designing and characterizing the performance of multichip module (MCM) substrates, In this paper, a method for optimizing the extraction of these parameters using genetic algorithms is presented. The results of this method are compared with optimization using the Levenberg-Marquardt (LM) algorithm used in the HSPICE circuit modeling tool A set of integrated resistor structures are fabricated, and their scattering parameters are measured for a range of frequencies from 45 MHz to 5 GHz Optimal equivalent circuit models for these structures are derived from the s-parameter measurements using each algorithm. Predicted s-parameters for the optimized equivalent circuit are then obtained from HSPICE. The difference between the measured and predicted s-parameters in the frequency range of interest is used as a measure of the accuracy of the two optimization algorithms. It is determined that the LM method is extremely dependent upon the initial starting point of the parameter search and is thus prone to become trapped in local minima This drawback is alleviated and the accuracy of the parameter values obtained is improved using genetic algorithms.
引用
收藏
页码:38 / 46
页数:9
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