Spin-splitting transport in In0.75Ga0.25As/In0.75Al0.25As quantum wire field-effect-transistor

被引：21

作者：

Sato, Y ^{[1
]}

Gozu, S ^{[1
]}

Kikutani, T ^{[1
]}

Yamada, S ^{[1
]}

机构：

[1] Japan Adv Inst Sci & Technol Hokuriku, Sch Mat Sci, Tatsunokuchi, Ishikawa 9231292, Japan

来源：

PHYSICA B | 1999年 / 272卷 / 1-4期

关键词：

zero-field spin-splitting; narrow gap HEMT; in-plane anisotropy;

D O I：

10.1016/S0921-4526(99)00374-9

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We have made quantum wire field-effect-transistor (QWR-FET) in normal-type In0.75Ga0.25As/In0.75Al0.25As modulation-doped heterostructure and investigated spin-splitting properties by low-temperature magnetoresistance (MR) measurements. Maximum value of zero-field spin-orbit coupling constant, alpha(zero), obtained here is 78 (x10(-12) eVm). We also confirmed an in-plane anisotropy of alpha(zero), that is, different alpha(zero)s in between [(1) over bar 1 0] and [1 1 0] directed samples and a reduction of alpha(zero) by applying negative gate biases. In MR measurements, we also observed conductance fluctuations superimposing on the beat oscillation in the sample with widths less than 2 mu m. (C) 1999 Elsevier Science B.V. All rights reserved.

引用

页码：114 / 116

页数：3

共 5 条

[1] OSCILLATORY EFFECTS AND THE MAGNETIC-SUSCEPTIBILITY OF CARRIERS IN INVERSION-LAYERS [J].

BYCHKOV, YA ;

RASHBA, EI .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1984, 17 (33) :6039-6045

[2] ELECTRONIC ANALOG OF THE ELECTROOPTIC MODULATOR [J].

DATTA, S ;

DAS, B .

APPLIED PHYSICS LETTERS, 1990, 56 (07) :665-667

[3] Low temperature high electron mobility in In0.75Ga0.25As/In0.75Al0.25As modulation-doped heterostructures grown on GaAs substrate [J].

Gozu, S ;

Hong, CL ;

Yamada, S .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1998, 37 (12B) :L1501-L1503

[4] Ga0.25In0.75As/InP quantum wells with extremely high and anisotropic two-dimensional electron gas mobilities [J].

Ramvall, P ;

Carlsson, N ;

Omling, P ;

Samuelson, L ;

Seifert, W ;

Stolze, M ;

Wang, Q .

APPLIED PHYSICS LETTERS, 1996, 68 (08) :1111-1113

[5] Effect of the heterointerface on the spin splitting in modulation doped InxGa1-xAs/InP quantum wells for B→O [J].

Schapers, T ;

Engels, G ;

Lange, J ;

Klocke, T ;

Hollfelder, M ;

Luth, H .

JOURNAL OF APPLIED PHYSICS, 1998, 83 (08) :4324-4333

← 1 →