Active surface area determination of Pd-Si alloys by H-adsorption

被引：112

作者：

Correia, AN ^{[1
]}

Mascaro, LH ^{[1
]}

Machado, SAS ^{[1
]}

Avaca, LA ^{[1
]}

机构：

[1] UNIV SAO PAULO,INST QUIM SAO CARLOS,BR-13560970 SAO CARLOS,SP,BRAZIL

来源：

ELECTROCHIMICA ACTA | 1997年 / 42卷 / 03期

基金：

巴西圣保罗研究基金会;

关键词：

active surface area; Pd-Si alloy; hydrogen adsorption; amorphous alloy;

D O I：

10.1016/S0013-4686(96)00232-0

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

The active surface area of a Pd-Si alloy (80-20 at.%) was determined by means of the anodic charge associated to the desorption peaks of underpotential deposited hydrogen atoms. The value found was very close to that expected for a complete monolayer of Pd-H, considering the percentage of Pd on the surface. The results are comparable to those obtained by the classical cyclic voltammetric method of reduction of oxides grown at different inversion potentials. The agreement suggests that one full monolayer of adsorbed hydrogen is formed on the Pd portion of the alloy surface. Copyright (C) 1996 Elsevier Science Ltd

引用

页码：493 / 495

页数：3

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