A two-step metal organic vapor phase epitaxy growth method for high-quality ZnO on GaN/Al2O3 (0001)

被引：52

作者：

Dadgar, A ^{[1
]}

Oleynik, N ^{[1
]}

Forster, D ^{[1
]}

Deiter, S ^{[1
]}

Witek, H ^{[1
]}

Bläsing, J ^{[1
]}

Bertram, F ^{[1
]}

Krtschil, A ^{[1
]}

Diez, A ^{[1
]}

Christen, J ^{[1
]}

Krost, A ^{[1
]}

机构：

[1] Otto Von Guericke Univ, FNW IEP, D-39016 Magdeburg, Germany

来源：

JOURNAL OF CRYSTAL GROWTH | 2004年 / 267卷 / 1-2期

关键词：

metalorganic vapor phase epitaxy; oxides; semiconducting II-VT materials;

D O I：

10.1016/j.jcrysgro.2004.03.028

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

High-quality [0 0 0 1]-oriented ZnO films were grown in a single growth experiment on GaN/AlO3 applying a two-step metal organic vapor phase epitaxy growth technique. The essence of this method is the heteroepitaxy of a low-temperature ZnO buffer layer using dimethyl-zinc and tertiary-butanol precursors on GaN/Al2O3 and the subsequent homoepitaxial growth of a high-temperature layer using NO as O-precursor. The layers show smooth surface morphology and high crystalline quality as demonstrated by X-ray diffraction (FWHM of (0 0 0 2) omega-scans for a 2.28 mum thick layer is 160"). The bright luminescence is dominated by narrow excitonic emission lines (e.g., FWHM < 1.3 meV for bound exciton I-8). Our method opens broad prospect for the growth of ZnO-based device structures. (C) 2004 Elsevier B.V. All rights reserved.

引用

页码：140 / 144

页数：5

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