The formation and microstructures of Si-based blue-light emitting porous beta-SiC

被引：6

作者：

Bao, XM

Liao, LS

Li, NS

Min, NB

Gao, YH

Zhang, Z

机构：

[1] NANJING UNIV,NATL LAB SOLID STATE MICROSTRUCT,NANJING 210093,PEOPLES R CHINA

[2] CHINESE ACAD SCI,BEIJING LAB ELECTRON MICROSCOPY,BEIJING 100080,PEOPLES R CHINA

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1996年 / 119卷 / 04期

基金：

中国国家自然科学基金;

关键词：

D O I：

10.1016/S0168-583X(96)00464-8

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

Porous beta-SiC has been formed by C+ implantation into crystal Si followed by thermal annealing and anodization. The photoluminescence was measured. The microstructures were observed by cross-sectional and planar electron transmission microscope (TEM) and high resolution TEM. The growth of SiC precipitates and the formation of porous SiC are discussed. On the basis of microstructure analysis, the intense blue emission from porous beta-SiC is explained by the quantum confinement effect.

引用

页码：505 / 509

页数：5

共 15 条

[1]

Bao Ximao, 1993, Chinese Journal of Semiconductors, V14, P322

[2] PHOTOLUMINESCENCE CHARACTERIZATION OF CUBIC SIC GROWN BY CHEMICAL VAPOR-DEPOSITION ON SI SUBSTRATES [J].