In-plane aligned Pr6O11 buffer layers by ion-beam assisted pulsed laser deposition on metal substrates

被引:16
作者
Betz, V
Holzapfel, B
Raouser, D
Schultz, L
机构
[1] Institute of Metallic Materials, IFW Dresden
关键词
D O I
10.1063/1.120226
中图分类号
O59 [应用物理学];
学科分类号
摘要
Biaxially aligned praseodymium oxide (Pr6O11) thin films were prepared by ion-beam assisted laser deposition on mechanically polished metal alloy substrates. A low divergence rf plasma source was used as an assisting source. Deposited films showed (001) oriented film growth with a strong biaxial alignment in the film plane. The degree of in-plane orientation dependent on ion-to-atom ratio and ion bombardment angle was studied. Planar ion channeling along the {110} planes is used to explain the observed alignment features. At an ion-to-atom ratio of 0.17 and an ion incident angle of 60 degrees, in-plane orientations of 16 degrees full width at half-maximum were obtained, Due to the low lattice mismatch (0.3%) to YBa2Cu3Ox films, the material could be an alternative to the YSZ/CeO2 buffer layer system currently used for high critical current carrying superconducting tapes. (C) 1997 American Institute of Physics.
引用
收藏
页码:2952 / 2954
页数:3
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