Preparation of BaxSr1-xTiO3 thin films with seeding layer by a sol-gel method

被引：18

作者：

Wei, Z ^{[1
]}

Xu, H ^{[1
]}

Noda, M ^{[1
]}

Okuyama, M ^{[1
]}

机构：

[1] Osaka Univ, Grad Sch Engn Sci, Toyonaka, Osaka 5608531, Japan

来源：

JOURNAL OF CRYSTAL GROWTH | 2002年 / 237卷

关键词：

solid solutions; x-ray diffraction; polycrystalline deposition; ferroelectric materials; MESFET devices;

D O I：

10.1016/S0022-0248(01)01966-2

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Ferroelectric barium strontium titanate (BaxSr1-xTiO3, BST) thin films have been prepared by depositing a very thin layer of BST on the substrate as a seeding layer, which was expected to enhance crystal growth during heat treatment. SEM analysis data indicate that bigger grains were obtained for films coated with a seeding layer compared with films without a seeding layer. The polarization at E = 0 and the field at P = 0 of the sample prepared with a seeding layer are 2.6 muC/cm(2) and 20kV/cm, respectively. The leakage current density of the thin film prepared with a seeding layer Lit +/-40 kV/cm (+/-1 V) is about 9 x 10(-8) A /cm(2). (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：443 / 447

页数：5

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