Vertically coupled InP microdisk switching devices with electroabsorptive active regions

被引：37

作者：

Djordjev, K ^{[1
]}

Choi, SJ ^{[1
]}

Dapkus, PD ^{[1
]}

机构：

[1] Univ So Calif, Dept Elect Engn Electrophys, Los Angeles, CA 90089 USA

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 2002年 / 14卷 / 08期

关键词：

demultiplexers; electroabsorption modulators; InGaAsP; integrated optics; microdisk resonators; microresonators; optical switches; optical waveguide filters; routers;

D O I：

10.1109/LPT.2002.1021987

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

InP, vertically coupled microdisk resonator/waveguide switching devices with an electroabsorptive (EA) active region are demonstrated for the first time. The devices exhibit single-mode operation, large free spectral range of 10.5 nm and a high quality factor of 5700. The EA effect provides a way of loss-trimming the resonant characteristics. Active switches, routers, and fast modulators based on these devices are envisioned as part of a DWM system.

引用

页码：1115 / 1117

页数：3

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