Disorder and size effects in the envelope-function approximation

被引:34
作者
Dargam, TG
Capaz, RB
Koiller, B
机构
[1] Instituto de Física, Universidade Federal do Rio de Janeiro, Rio de Janeiro, 21945-970
关键词
D O I
10.1103/PhysRevB.56.9625
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We investigate the validity and limitations of the envelope-function approximation (EFA), widely accepted for the description of the electronic states of semiconductor heterostructures. We consider narrow quantum wells of GaAs confined by AlxGa1-xAs barriers. Calculations performed within the tight-binding approxima tion using ensembles of supercells are compared to the EFA results. Results for miniband widths in superlattices obtained in different approximations are also discussed. The main source of discrepancy for narrow wells is the treatment of alloy disorder within the virtual crystal approximation. We also test the two key assumptions of the EFA: (a) that the electronic wave functions have Bloch symmetry with well-defined (k) over right arrow in the alloy region; (b) that the periodic parts of the Bloch functions are the same throughout the heterostructure. We show that inaccuracies are mainly due to the former assumption.
引用
收藏
页码:9625 / 9629
页数:5
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