Effects of electrode materials and annealing ambients on the electrical properties of TiO2 thin films by metalorganic chemical vapor deposition

被引：26

作者：

Sun, SC ^{[1
]}

Chen, TF ^{[1
]}

机构：

[1] NATL CHIAO TUNG UNIV,INST ELECT,DEPT ELECT ENGN,HSINCHU 30039,TAIWAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1997年 / 36卷 / 3B期

关键词：

TiO2; leakage current; sintering; TaN; WN; annealing; N2O; oxygen vacancy; MOCVD;

D O I：

10.1143/JJAP.36.1346

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this work, we investigate the effects of the top electrode materials and annealing ambients on the electrical properties of chemical-vapor-deposited (CVD) TiO2 films. Experimental results indicate that the leakage current is mainly determined by the work function of electrode materials before sintering. The capacitor with TaN top electrode reveals the least leakage. After 450 degrees C and 800 degrees C sintering in N-2, owing to its thermal stability, WN is found to be the optimal material for withstanding high-temperature thermal treatment. From the annealing ambient results, N2O was more effective than O-2 in reducing leakage current, and furnace annealing in N2O (FN2O) produces the smallest leakage. Such a phenomenon is primarily owing to the reduction of oxygen vacancies and carbon concentration in TiO2 by the atomic oxygen generated by the dissociation of N2O during the thermal cycle, thereby improving film quality.

引用

页码：1346 / 1350

页数：5

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