Space-charge limited conduction processes in polybenzo[c]thiophene films

被引：11

作者：

Musa, I ^{[1
]}

Higgins, SJ ^{[1
]}

Eccleston, W ^{[1
]}

机构：

[1] UNIV LIVERPOOL,DEPT CHEM,LIVERPOOL L69 3BX,MERSEYSIDE,ENGLAND

来源：

JOURNAL OF APPLIED PHYSICS | 1997年 / 81卷 / 05期

关键词：

D O I：

10.1063/1.364280

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We present an observation of extensive space-charge limited conduction in polybenzo[c]thiophene. Strong evidence for the presence of three discrete trapping levels is shown with a possibility of a fourth trap level. The density of traps for the first three levels is found to be 5 x 10(16) cm(-3), 1 x 10(17) cm(-3), and 2 x 10(17) cm(-3), respectively. A lower limit for the free-carrier mobility was estimated to be similar to 3 X 10(-5) cm(2) V-1 s(-1). (C) 1997 American Institute of Physics.

引用

页码：2288 / 2290

页数：3

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