Temperature dependent photoluminescence of single CdS nanowires

被引：53

作者：

Hoang, Thang Ba ^{[1
]}

Titova, L. V.

Jackson, H. E.

Smith, L. M.

Yarrison-Rice, J. M.

Lensch, J. L.

Lauhon, L. J.

机构：

[1] Univ Cincinnati, Dept Phys, Cincinnati, OH 45221 USA

[2] Miami Univ, Dept Phys, Oxford, OH 45056 USA

[3] Northwestern Univ, Dept Mat Sci & Engn, Evanston, IL 60208 USA

来源：

APPLIED PHYSICS LETTERS | 2006年 / 89卷 / 12期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1063/1.2357003

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Temperature dependent photoluminescence (PL) is used to study the electronic properties of single CdS nanowires. At low temperatures, both near band edge (NBE) PL and spatially localized defect-related PL are observed in many nanowires. The intensity of the defect states is a sensitive tool to judge the character and structural uniformity of nanowires. As the temperature is raised, the defect states rapidly quench at varying rates leaving the NBE PL which dominates up to room temperature. All PL lines from the nanowires follow closely the temperature dependent band edge, similar to that observed in bulk CdS. (c) 2006 American Institute of Physics.

引用

页数：3

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