Anisotropy of the nitrogen conduction states in the group III nitrides studied by polarized x-ray absorption

被引:39
作者
LawniczakJablonska, K
Suski, T
LilientalWeber, Z
Gullikson, EM
Underwood, JH
Perera, RCC
Drummond, TJ
机构
[1] POLISH ACAD SCI,INST PHYS,PL-02668 WARSAW,POLAND
[2] POLISH ACAD SCI,HIGH PRESSURE RES CTR,PL-01142 WARSAW,POLAND
[3] SANDIA NATL LABS,ALBUQUERQUE,NM 87185
关键词
D O I
10.1063/1.119000
中图分类号
O59 [应用物理学];
学科分类号
摘要
The energy distribution of the nitrogen antibonding electron states in the hexagonal epitaxial layers of AlN, GaN, and InN and cubic epitaxial layers of GaN and InN along p(xy) plane and p(z) direction is reported. The study was performed by the polarized x-ray absorption at the K edge of N. A strong polarization dependence of the absorption spectra indicating the significant anisotropy of the conduction band was found in the case of hexagonal samples. Very weak polarization dependencies observed in cubic samples correspond well with the defect distribution anisotropy. Qualitatively different and cation dependent antibonding states distribution point out the role played by a contribution of hybridized cation-nitrogen electronic states to the individual conduction bandstructures of AlN, GaN, and InN. (C) 1997 American Institute of Physics.
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页码:2711 / 2713
页数:3
相关论文
共 7 条
[1]   OUT-OF-PLANE ORBITAL CHARACTERS OF INTRINSIC AND DOPED HOLES IN LA2-XSRXCUO4 [J].
CHEN, CT ;
TJENG, LH ;
KWO, J ;
KAO, HL ;
RUDOLF, P ;
SETTE, F ;
FLEMING, RM .
PHYSICAL REVIEW LETTERS, 1992, 68 (16) :2543-2546
[2]   OPTICAL AND STRUCTURAL-PROPERTIES OF III-V NITRIDES UNDER PRESSURE [J].
CHRISTENSEN, NE ;
GORCZYCA, I .
PHYSICAL REVIEW B, 1994, 50 (07) :4397-4415
[3]   EFFECT OF CHEMICAL-COMBINATION OF X-RAY ABSORPTION EDGES OF TERNARY COMPOUNDS [J].
HUSAIN, M ;
BATRA, A ;
SRIVASTAVA, KS .
PHYSICA B, 1989, 160 (02) :125-128
[4]   UV REFLECTIVITY OF GAN - THEORY AND EXPERIMENT [J].
LAMBRECHT, WRL ;
SEGALL, B ;
RIFE, J ;
HUNTER, WR ;
WICKENDEN, DK .
PHYSICAL REVIEW B, 1995, 51 (19) :13516-13532
[5]   VALENCE-BAND DISCONTINUITY BETWEEN GAN AND ALN MEASURED BY X-RAY PHOTOEMISSION SPECTROSCOPY [J].
MARTIN, G ;
STRITE, S ;
BOTCHKAREV, A ;
AGARWAL, A ;
ROCKETT, A ;
MORKOC, H ;
LAMBRECHT, WRL ;
SEGALL, B .
APPLIED PHYSICS LETTERS, 1994, 65 (05) :610-612
[6]   QUASI-PARTICLE BAND-STRUCTURE OF ALN AND GAN [J].
RUBIO, A ;
CORKILL, JL ;
COHEN, ML ;
SHIRLEY, EL ;
LOUIE, SG .
PHYSICAL REVIEW B, 1993, 48 (16) :11810-11816
[7]  
RUVIMOV S, 1997, MATER RES SOC S P, V449, P251