Study of the band alignment in (Zn, Cd)Se/ZnSe quantum wells by means of photoluminescence excitation spectroscopy

被引:4
作者
Guénaud, C
Deleporte, E
Filoramo, A
Lelong, P
Delalande, C
Morhain, C
Tournié, E
Faurie, JP
机构
[1] Ecole Normale Super, Phys Mat Condensee Lab, F-75231 Paris 05, France
[2] CNRS, CRHEA, F-06560 Valbonne, France
关键词
D O I
10.1063/1.372105
中图分类号
O59 [应用物理学];
学科分类号
摘要
We report on photoluminescence excitation spectroscopy performed on several (Zn, Cd)Se/ZnSe quantum wells at low temperature. Experimental results are compared with a calculation of the heavy- and light-hole excitonic transition energies. It is shown that the energy difference between the first heavy- and light-hole transitions E1H1 and E1L1 can be very sensitive to the valence-band offset under some circumstances, making a determination of this parameter then possible. The strain-free relative valence-band offset is found q(v)(0) = 13% +/- 2%. The heavy-hole excitons are type-I excitons, whereas the light-hole excitons are type-II excitons. (C) 2000 American Institute of Physics. [S0021-8979(00)03804-4].
引用
收藏
页码:1863 / 1868
页数:6
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