Modulation of the second-order susceptibility in GaAs/AlAs superlattices

被引：18

作者：

Hutchings, DC ^{[1
]}

机构：

[1] Univ Glasgow, Dept Elect & Elect Engn, Glasgow G12 8QQ, Lanark, Scotland

来源：

APPLIED PHYSICS LETTERS | 2000年 / 76卷 / 11期

关键词：

D O I：

10.1063/1.126032

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The modulation of the bulk-like second-order susceptibility with quantum well disordering is calculated for a GaAs/AlAs superlattice. The calculation is based on the A.p form of the susceptibility, which is the more appropriate form for semiconductors, and includes the influence of the Gamma(15)(c) upper conduction band set which ensures the necessary absence of inversion symmetry. The undisordered structure has the degeneracy broken between the chi(xyz)((2)) and chi(zxy)((2)) tensor elements which is restored upon disordering. The shift of the half-band gap resonance gives a maximum modulation depth Delta chi(xyz)((2))approximate to 60 pm V-1 in the transparency window for this structure. (C) 2000 American Institute of Physics. [S0003- 6951(00)01611-9].

引用

页码：1362 / 1364

页数：3

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