Use of a pulsed laser to study properties of CdZnTe pixel detectors

被引：11

作者：

Bolotnikov, AE ^{[1
]}

Boggs, SE ^{[1
]}

Cook, WR ^{[1
]}

Harrison, FA ^{[1
]}

Schindler, SM ^{[1
]}

机构：

[1] CALTECH, Space Radiat Lab, Pasadena, CA 91125 USA

来源：

PENETRATING RADIATION SYSTEMS AND APPLICATIONS | 1999年 / 3769卷

关键词：

CdZnTe detector characterization;

D O I：

10.1117/12.363691

中图分类号：

TB8 [摄影技术];

学科分类号：

0804 ;

摘要：

We have investigated the utility of employing a short (<4 ns) pulsed laser with wavelength tunable between 600-950 nm as a tool for studying and characterizing CdZnTe detectors. By using a single mode optical fiber and simple optics, we can focus the beam to a spot size of less than 10 mu m and generate the number of the excess carriers equivalent to a several MeV gamma-ray either at the surface or deep inside the sample. The advantages of this technique over use of a collimated X-ray or alpha particle source are strong induced signal, precise pointing, and triggering capability. As examples of using this technique, we present the results of measurements of the drift velocity, electron lifetime, and electric field line distribution inside CZT pixel detectors.

引用

收藏

页码：52 / 58

页数：7

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