Temperature antiquenching of the luminescence from capped CdSe quantum dots

被引：130

作者：

Wuister, SF ^{[1
]}

van Houselt, A ^{[1
]}

Donegá, CDM ^{[1
]}

Vanmaekelbergh, D ^{[1
]}

Meijerink, A ^{[1
]}

机构：

[1] Univ Utrecht, Chem & Phys Condensed Matter Debye Inst, NL-3584 CC Utrecht, Netherlands

来源：

ANGEWANDTE CHEMIE-INTERNATIONAL EDITION | 2004年 / 43卷 / 23期

关键词：

luminescence; nanostructures; quantum chemistry; semiconductors;

D O I：

10.1002/anie.200353532

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Actively passivated: The surprising recovery of the luminescence intensity between 200 and 300 K for CdSe quantum dots gives insight into the importance of the interaction between the capping layer and the nanocrystal semiconductor. The vial on the left is at 160 K while the brightly luminescing solution on the right is at 300 K. These results show that the capping layer does not merely passivate the surface but plays an active role in surface reconstruction.

引用

页码：3029 / 3033

页数：5

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