Resonant spin-flip Raman scattering and localized exciton luminescence in submonolayer InAs-GaAs structures

被引：15

作者：

Sirenko, AA

Ruf, T

Ledentsov, NN

Egorov, AY

Kopev, PS

Ustinov, VM

Zhukov, AE

机构：

[1] MAX PLANCK INST FESTKORPERFORSCH,D-70569 STUTTGART,GERMANY

[2] RUSSIAN ACAD SCI,AF IOFFE PHYS TECH INST,ST PETERSBURG 194021,RUSSIA

来源：

SOLID STATE COMMUNICATIONS | 1996年 / 97卷 / 03期

关键词：

nanostructures; semiconductors; inelastic light scattering; luminescence;

D O I：

10.1016/0038-1098(95)00624-9

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We report on efficient resonant spin-flip Raman scattering due to localized heavy-hole excitons in single submonolayer InAs insertions in a GaAs matrix. Exciton, heavy-hole and electron g factors are directly measured for samples with different average thicknesses of InAs. The large size uniformity of the InAs islands manifests itself in very narrow heavy- and light-hole exciton photoluminescence peaks which also allow us to measure exciton g factors by magneto-luminescence spectroscopy.

引用

页码：169 / 174

页数：6

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