Low-threshold photonic crystal laser

被引：277

作者：

Loncar, M

Yoshie, T

Scherer, A

Gogna, P

Qiu, YM

机构：

[1] CALTECH, Dept Elect Engn, Pasadena, CA 91125 USA

[2] CALTECH, Jet Prop Lab, In Situ Technol & Expt Syst Sect, Pasadena, CA 91109 USA

来源：

APPLIED PHYSICS LETTERS | 2002年 / 81卷 / 15期

关键词：

D O I：

10.1063/1.1511538

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have fabricated photonic crystal nanocavity lasers, based on a high-quality factor design that incorporates fractional edge dislocations. Lasers with InGaAsP quantum well active material emitting at 1550 nm were optically pumped with 10 ns pulses, and lased at threshold pumping powers below 220 muW, the lowest reported for quantum-well based photonic crystal lasers, to our knowledge. Polarization characteristics and lithographic tuning properties were found to be in excellent agreement with theoretical predictions. (C) 2002 American Institute of Physics.

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收藏

页码：2680 / 2682

页数：3

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