Comment on "Raman scattering from a self-organized Ge dot superlattice" [Appl. Phys. Lett. 74, 1863, (1999)]

被引：21

作者：

Kolobov, AV

Tanaka, K

机构：

[1] Natl Inst Adv Interdisciplinary Res, Joint Res Ctr Atom Technol, Tsukuba, Ibaraki 305, Japan

[2] Electrotech Lab, Tsukuba, Ibaraki 305, Japan

来源：

关键词：

D O I：

10.1063/1.125395

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3572 / 3573

页数：2

共 4 条

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JOURNAL DE PHYSIQUE, 1965, 26 (11) :659-&

[2] Raman scattering from a self-organized Ge dot superlattice [J].

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Tang, YS ;

Wang, KL ;

Radetic, T ;

Gronsky, R .

[3] CRITICAL-POINT ANALYSIS OF 2-PHONON RAMAN-SPECTRUM OF SILICON [J].

UCHINOKURA, K ;

SEKINE, T ;

MATSUURA, E .

[4] RAMAN SCATTERING FROM DONOR AND ACCEPTOR IMPURITIES IN SILICON [J].

WRIGHT, GB ;

MOORADIA.A .