Analysis of island dynamics in epitaxial growth of thin films

被引:31
作者
Caflisch, RE
Li, B
机构
[1] Univ Calif Los Angeles, Dept Math, Los Angeles, CA 90095 USA
[2] Univ Calif Los Angeles, Calif NanoSyst Inst, Los Angeles, CA 90095 USA
[3] Univ Maryland, Dept Math, College Pk, MD 20742 USA
关键词
epitaxial growth; island dynamics; step edges; normal velocity; adatom diffusion; linear stability; step-edge kinetics; line tension; surface diffusion;
D O I
10.1137/S1540345902407208
中图分类号
O1 [数学];
学科分类号
0701 ; 070101 ;
摘要
This work is concerned with analysis and refinement for a class of island dynamics models for epitaxial growth of crystalline thin films. An island dynamics model consists of evolution equations for step edges (or island boundaries), coupled with a diffusion equation for the adatom density, on an epitaxial surface. The island dynamics model with irreversible aggregation is confirmed to be mathematically ill-posed, with a growth rate that is approximately linear for large wavenumbers. By including a kinetic model for the structure and evolution of step edges, the island dynamics model is made mathematically well-posed. In the limit of small edge Peclet number, the edge kinetics model reduces to a set of boundary conditions, involving line tension and one-dimensional surface diffusion, for the adatom density. Finally, in the infinitely fast terrace diffusion limit, a simplified model of one-dimensional surface diffusion and kink convection is derived and found to be linearly stable.
引用
收藏
页码:150 / 171
页数:22
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