Nanoscale germanium MOS dielectrics -: Part II:: High-κ gate dielectrics

被引:91
作者
Chui, Chi On
Kim, Hyoungsub
Chi, David
McIntyre, Paul C.
Saraswat, Krishna C.
机构
[1] Stanford Univ, Dept Elect Engn, Stanford, CA 94305 USA
[2] Stanford Univ, Dept Mat Sci & Engn, Stanford, CA 94305 USA
基金
美国国家科学基金会;
关键词
germanium; hafnium oxide; high-permittivity dielectric; MOS devices; surface passivation; zirconium oxide;
D O I
10.1109/TED.2006.875812
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In this paper, atomic layer deposition (ALD) and ultraviolet ozone oxidation (UVO) of zirconium and hafnium oxides are investigated for high-k dielectric preparation in Ge MOS devices from the perspectives of thermodynamic stability and electrical characteristics. Prior to performing these deposition processes, various Ge surface preparation schemes have been examined to investigate their effects on the resulting electrical performance of the Ge MOS capacitors. Interfacial layer-free ALD high-k growth on Ge could be obtained; yet, insertion of a stable interfacial layer greatly enhanced the electrical characteristics but with a compromise for equivalent dielectric thickness scalability. On the other hand, interfacial layer-free UVO high-k growth on Ge was demonstrated with minimal capacitance-voltage hysteresis and sub-1.0-nm capacitance equivalent thickness. Finally, the leakage conduction and scalability of these nanoscale Ge MOS dielectrics are discussed and are shown to outperform their Si counterparts.
引用
收藏
页码:1509 / 1516
页数:8
相关论文
共 27 条
[1]  
BAI WP, 2003, VLSI S, P121
[2]   Ultrathin Al2O3 and HfO2 gate dielectrics on surface-nitrided Ge [J].
Chen, JJH ;
Bojarczuk, NA ;
Shang, HL ;
Copel, M ;
Hannon, JB ;
Karasinski, J ;
Preisler, E ;
Banerjee, SK ;
Guha, S .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2004, 51 (09) :1441-1447
[3]   Zirconia grown by ultraviolet ozone oxidation on germanium(100) substrates [J].
Chi, D ;
Chui, CO ;
Saraswat, KC ;
Triplett, BB ;
McIntyre, PC .
JOURNAL OF APPLIED PHYSICS, 2004, 96 (01) :813-819
[4]   MR imaging findings of painful type II accessory navicular bone: Correlation with surgical and pathologic studies [J].
Choi, YS ;
Lee, KT ;
Kang, HS ;
Kim, EK .
KOREAN JOURNAL OF RADIOLOGY, 2004, 5 (04) :274-279
[5]  
Chui CO, 2002, IEEE ELECTR DEVICE L, V23, P473, DOI [10.1109/LED.2002.801319, 10.1009/LED.2002.801319]
[6]   Zirconia-germanium interface photoemission spectroscopy using synchrotron radiation [J].
Chui, CO ;
Lee, DI ;
Singh, AA ;
Pianetta, PA ;
Saraswat, KC .
JOURNAL OF APPLIED PHYSICS, 2005, 97 (11)
[7]   Scalability and electrical properties of germanium oxynitride MOS dielectrics [J].
Chui, CO ;
Ito, F ;
Saraswat, KC .
IEEE ELECTRON DEVICE LETTERS, 2004, 25 (09) :613-615
[8]  
Chui CO, 2002, INTERNATIONAL ELECTRON DEVICES 2002 MEETING, TECHNICAL DIGEST, P437, DOI 10.1109/IEDM.2002.1175872
[9]   HfO2 high-κ gate dielectrics on Ge(100) by atomic oxygen beam deposition -: art. no. 032908 [J].
Dimoulas, A ;
Mavrou, G ;
Vellianitis, G ;
Evangelou, E ;
Boukos, N ;
Houssa, M ;
Caymax, M .
APPLIED PHYSICS LETTERS, 2005, 86 (03) :1-3
[10]   Surface passivation using ultrathin AlNx film for Ge-metal-oxide-semiconductor devices with hafnium oxide gate dielectric -: art. no. 113501 [J].
Gao, F ;
Lee, SJ ;
Pan, JS ;
Tang, LJ ;
Kwong, DL .
APPLIED PHYSICS LETTERS, 2005, 86 (11) :1-3