A scanning photoemission microscope (SPEM) to study the interface chemistry of AlTi/C system

被引：9

作者：

Seal, S ^{[1
]}

Warwick, T

Sobczak, N

Morgiel, J

机构：

[1] Univ Cent Florida, Adv Mat Proc & Anal Ctr, Orlando, FL 32828 USA

[2] Univ Calif Berkeley, LBNL, Adv Light Source, Berkeley, CA 94720 USA

[3] Foundry Res Inst, Krakow, Poland

[4] Polish Acad Sci, PL-00901 Warsaw, Poland

来源：

JOURNAL OF MATERIALS SCIENCE LETTERS | 2000年 / 19卷 / 02期

关键词：

D O I：

10.1023/A:1006647430214

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

After the Ti-rich carbide layer achieves a particular size, followed by a formation of another Ti-deficient mixed carbide interface, it fractures from the graphite substrate due to residual stresses introduced by volume changes upon carbide formation by reprecipitation process. As a result, infiltration of the liquid Al takes place and reacts with the graphite to form Al4C3. This interpretation is consistent with the scanning photoemission microscopic images as well as XPS data.

引用

页码：123 / 126

页数：4

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