Ultraviolet electroluminescence in GaN/AlGaN single-heterojunction light-emitting diodes grown on Si(111)

被引：25

作者：

Sánchez-García, MA ^{[1
]}

Naranjo, FB ^{[1
]}

Pau, JL ^{[1
]}

Jiménez, A ^{[1
]}

Calleja, E ^{[1
]}

Muñoz, E ^{[1
]}

机构：

[1] UPM, ETSI Telecommun, Dept Ingn Elect, Madrid 28040, Spain

来源：

JOURNAL OF APPLIED PHYSICS | 2000年 / 87卷 / 03期

关键词：

D O I：

10.1063/1.372052

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

GaN:Mg/AlGaN single-heterojunction light-emitting diodes were grown on Si(111) substrates by plasma-assisted molecular-beam epitaxy. High-quality Mg-doped GaN layers with hole concentrations up to 1.2 x 10(17) holes/cm(3) and intense low-temperature photoluminescence, which increases in annealed samples, were obtained. Smooth AlGaN layers, with surface roughness below 5 nm, were used as buffer layers. Continuous-wave room-temperature ultraviolet electroluminescence was observed at 365 nm with a full width at half maximum of 8 nm. An estimated optical power output of 1.5 mu W was achieved under 15 V/35 mA operation. (C) 2000 American Institute of Physics. [S0021-8979(00)02803-6].

引用

页码：1569 / 1571

页数：3

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