Atomic rearrangement of sputtered amorphous carbon nitride thin films during growth

被引：19

作者：

Durand-Drouhin, O ^{[1
]}

Benlahsen, M ^{[1
]}

Clin, M ^{[1
]}

Zellama, K ^{[1
]}

机构：

[1] Fac Sci, Phys Mat Condensee Lab, F-80039 Amiens 2, France

来源：

关键词：

thin films; points defects; mechanical properties;

D O I：

10.1016/j.diamond.2004.05.005

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Spectroscopic investigations of amorphous carbon nitride thin films (a-CNx) deposited by radio-frequency (RF) magnetron sputtering on (100) silicon wafers, under different RF power, are reported. The local bonding in the a-CNx films was analyzed by Fourier Transform Infrared (FTIR) and Raman spectroscopies correlated with Nuclear Reaction Analysis (NRA) and Elastic Recoil Detection Analysis (ERDA) measurements. The refractive index was determined using optical transmission spectroscopy. The microstructure analysis revealed the porous character of films and their post deposition contamination by oxygen and water, which decreases slowly with increasing RF power. Its correlation with the mass density and the refractive index leads to introduce the surface/volume ratio of the porosities as the determinant microstructural parameter to interpret the changes in the infrared (IR) absorption spectra as the RE power increases. (C) 2004 Elsevier B.V. All rights reserved.

引用

页码：1854 / 1858

页数：5

共 24 条

[1] Spectroscopic determination of the structure of amorphous nitrogenated carbon films [J].

Bhattacharyya, S ;

Cardinaud, C ;

Turban, G .

JOURNAL OF APPLIED PHYSICS, 1998, 83 (08) :4491-4500

[2]

Campbell D. S., 1970, HDB THIN FILM TECHNO, P12

[3] Growth and bonding structure of hard hydrogenated amorphous carbon thin films deposited from an electron cyclotron resonance plasma [J].

Durand-Drouhin, O ;

Lejeune, M ;

Benlahsen, M .

JOURNAL OF APPLIED PHYSICS, 2002, 91 (02) :867-873

[4] Effect of target self-bias on carbon nitride thin films deposited by RF magnetron sputtering [J].

Durand-Drouhin, O ;

Lejeune, M ;

Clin, M ;

Ballutaud, D ;

Benlahsen, M .

SOLID STATE COMMUNICATIONS, 2001, 118 (04) :179-182

[5]

DURANDDROUHIN O, 2001, THESIS U PJ VERNE AM

[6] Interpretation of Raman spectra of disordered and amorphous carbon [J].

Ferrari, AC ;

Robertson, J .

PHYSICAL REVIEW B, 2000, 61 (20) :14095-14107

[7] Interpretation of infrared and Raman spectra of amorphous carbon nitrides [J].

Ferrari, AC ;

Rodil, SE ;

Robertson, J .

PHYSICAL REVIEW B, 2003, 67 (15)

[8] Electronic structure of hydrogenated carbon nitride films [J].

Hammer, P ;

Victoria, NM ;

Alvarez, F .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 1998, 16 (05) :2941-2949

[9] Influence of plasma parameters on the growth and properties of magnetron sputtered CNx thin films [J].

Hellgren, N ;

Macák, K ;

Broitman, E ;

Johansson, MP ;

Hultman, L ;

Sundgren, JE .

JOURNAL OF APPLIED PHYSICS, 2000, 88 (01) :524-532

[10] Nitrogen-driven sp3 to sp2 transformation in carbon nitride materials [J].

Hu, JT ;

Yang, PD ;

Lieber, CM .

PHYSICAL REVIEW B, 1998, 57 (06) :R3185-R3188

← 1 2 3 →