Brittle-ductile relaxation kinetics of strained AlGaN/GaN heterostructures

被引：111

作者：

Hearne, SJ

Han, J

Lee, SR

Floro, JA

Follstaedt, DM

Chason, E

Tsong, IST

机构：

[1] Sandia Natl Labs, Albuquerque, NM 87185 USA

[2] Brown Univ, Dept Mat Sci, Providence, RI 02912 USA

[3] Arizona State Univ, Dept Phys & Astron, Tempe, AZ 85287 USA

来源：

APPLIED PHYSICS LETTERS | 2000年 / 76卷 / 12期

关键词：

D O I：

10.1063/1.126087

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have directly measured the stress evolution during metal-organic chemical vapor deposition of AlGaN/GaN heterostructures on sapphire. In situ stress measurements were correlated with ex situ microstructural analysis to determine directly a critical thickness for cracking and the subsequent relaxation kinetics of tensile-strained AlxGa1-xN grown on GaN. Cracks appear to initiate the formation of misfit dislocations at the AlGaN/GaN interface, which account for the majority of the strain relaxation. (C) 2000 American Institute of Physics. [S0003-6951(00)01212-2].

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页码：1534 / 1536

页数：3

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