External cavity laser diode with 40 nm continuous tuning range around 825 nm

被引:36
作者
Wandt, D
Laschek, M
Przyklenk, K
Tunnermann, A
Welling, H
机构
[1] Laser Zentrum Hannover e.V., D-30419 Hannover
关键词
D O I
10.1016/0030-4018(96)00171-X
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
We report on a broadly tunable external cavity semiconductor laser near 825 nm employing a grating mounted in grazing incidence. The laser system is tunable without mode hops in the wavelength range from 800 nm to 840 nm with output powers up to 6.5 mW. For the first time, such an external cavity laser has been used to obtain the water vapor absorption spectrum in ambient air between 814 nm and 831 nm in a single scan.
引用
收藏
页码:81 / 84
页数:4
相关论文
共 18 条
[1]   AN OPTICALLY NARROWED DIODE-LASER FOR RB SATURATION SPECTROSCOPY [J].
BARWOOD, GP ;
GILL, P ;
ROWLEY, WRC .
JOURNAL OF MODERN OPTICS, 1990, 37 (04) :749-758
[2]  
BREANT C, 1983, LASER SPECTROSCOPY, V6, P138
[3]   THE DIODE-LASER IN ATOMIC PHYSICS [J].
CAMPARO, JC .
CONTEMPORARY PHYSICS, 1985, 26 (05) :443-477
[4]  
CHOW WW, 1994, SEMICONDUCTOR LASER, pCH9
[5]   FREQUENCY STABILIZATION OF SEMICONDUCTOR-LASERS BY RESONANT OPTICAL FEEDBACK [J].
DAHMANI, B ;
HOLLBERG, L ;
DRULLINGER, R .
OPTICS LETTERS, 1987, 12 (11) :876-878
[6]  
Duarte F. J., 1990, DYE LASER PRINCIPLES
[7]  
FAVRE F, 1991, ELECTRON LETT, V27, P184
[8]  
FAVRE F, 1986, ELECTRON LETT, V22, P7895
[9]   SPECTRAL CHARACTERISTICS OF EXTERNAL-CAVITY CONTROLLED SEMICONDUCTOR-LASERS [J].
FLEMING, MW ;
MOORADIAN, A .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1981, 17 (01) :44-59
[10]   AMPLITUDE AND FREQUENCY STABILITY OF A DIODE-PUMPED ND-YAG LASER OPERATING AT A SINGLE-FREQUENCY CONTINUOUS-WAVE OUTPUT POWER OF 20-W [J].
FREITAG, I ;
GOLLA, D ;
KNOKE, S ;
SCHONE, W ;
ZELLMER, H ;
TUNNERMANN, A ;
WELLING, H .
OPTICS LETTERS, 1995, 20 (05) :462-464