Large-signal millimeter-wave CMOS modeling with BSIM3

被引：13

作者：

Emami, S ^{[1
]}

Doan, CH ^{[1
]}

Niknejad, AM ^{[1
]}

Brodersen, RW ^{[1
]}

机构：

[1] Univ Calif Berkeley, Berkeley Wireless Res Ctr, Berkeley, CA 94704 USA

来源：

2004 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS (RFIC) SYMPOSIUM, DIGEST OF PAPERS | 2004年

关键词：

BSIM3; CMOS large-signal model; harmonic power; mm-wave CMOS modeling;

D O I：

10.1109/RFIC.2004.1320559

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A large-signal modeling methodology based upon a modified BSIM3v3 transistor model is presented which targets mm-wave CMOS applications. The effect of parasitics on the high-frequency operation of CMOS transistors is discussed, and a standard intrinsic BSIM3v3 model card is augmented with lumped elements to model these effects. Core BSIM parameters are extracted to match the measured dc I-V curves of a fabricated common-source NMOS transistor. Measured S-parameters are used to extract external parasitic component values to obtain a bias-dependent small-signal mm-wave frequency fit up to 65 GHz. Large-signal mm-wave accuracy of the model is verified by measuring the output harmonics power under large-signal excitation. Comparisons of measurements with the simulations show good agreement up to 60 GHz.

引用

页码：163 / 166

页数：4

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