Electrical characterization of SrBi2Ta2O9 capacitors for non-volatile memory operation

被引：5

作者：

Amanuma, K

Kunio, T

机构：

[1] Microlectron. Research Laboratories, NEC Corporation, Sagamihara 229

来源：

INTEGRATED FERROELECTRICS | 1997年 / 16卷 / 1-4期

关键词：

D O I：

10.1080/10584589708013039

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Pulse response of SrBi2Ta2O9 capacitors was measured for large-scale non-volatile memory design. Pulse response depended on capacitor size, while such a dependence was not observed in hysteresis measurement. As the reference capacitor in the Sawyer-Tower circuit decrease, the signal voltage This result suggests small bit-line capacitor is preferable for memory design. The possibility of very low-voltage operation was indicated.

引用

页码：175 / 182

页数：8

共 6 条

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[2]

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[3]

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