Conductance quantization in bismuth nanowires at 4 K

被引:63
作者
CostaKramer, JL
Garcia, N
Olin, H
机构
[1] CHALMERS UNIV TECHNOL,DEPT PHYS,SE-41296 GOTHENBURG,SWEDEN
[2] GOTHENBURG UNIV,SE-41296 GOTHENBURG,SWEDEN
关键词
D O I
10.1103/PhysRevLett.78.4990
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
Conductance experiments on Bi nanowires at 4 K, obtained with a scanning tunneling microscope, are presented. The conductance of these Bi nanocontacts, formed between two Bi electrodes, exhibits plateaus at quantized values of G(0) = 2e(2)/h, remaining basically constant during electrode separations of about 50 nm. This is the first rime that such plateaus have been observed in semimetals. This histogram of conductance values, constructed with thousands of consecutive contact breakage conductance experiments. exhibits clear peaks at G(0) and 2G(0).
引用
收藏
页码:4990 / 4993
页数:4
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