Ultralow surface recombination of c-Si substrates passivated by plasma-assisted atomic layer deposited Al2O3

被引：649

作者：

Hoex, B. ^{[1
]}

Heil, S. B. S. ^{[1
]}

Langereis, E. ^{[1
]}

van de Sanden, M. C. M. ^{[1
]}

Kessels, W. M. M. ^{[1
]}

机构：

[1] Eindhoven Univ Technol, Dept Appl Phys, NL-5600 MB Eindhoven, Netherlands

来源：

APPLIED PHYSICS LETTERS | 2006年 / 89卷 / 04期

关键词：

D O I：

10.1063/1.2240736

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Excellent surface passivation of c-Si has been achieved by Al2O3 films prepared by plasma-assisted atomic layer deposition, yielding effective surface recombination velocities of 2 and 13 cm/s on low resistivity n- and p-type c-Si, respectively. These results obtained for similar to 30 nm thick Al2O3 films are comparable to state-of-the-art results when employing thermal oxide as used in record-efficiency c-Si solar cells. A 7 nm thin Al2O3 film still yields an effective surface recombination velocity of 5 cm/s on n-type silicon.

引用

页数：3

共 19 条

[1] IMPACT OF ILLUMINATION LEVEL AND OXIDE PARAMETERS ON SHOCKLEY-READ-HALL RECOMBINATION AT THE SI-SIO2 INTERFACE [J].

ABERLE, AG ;

GLUNZ, S ;

WARTA, W .

JOURNAL OF APPLIED PHYSICS, 1992, 71 (09) :4422-4431

[2]

Agostinelli G., 2004, P 19 EUR PHOT SOL EN, P132

[3] Thermal annealing effects on the structural and electrical properties of HfO2/Al2O3 gate dielectric stacks grown by atomic layer deposition on Si substrates [J].

Cho, MJ ;

Park, HB ;

Park, J ;

Hwang, CS ;

Lee, JC ;

Oh, SJ ;

Jeong, J ;

Hyun, KS ;

Kang, HS ;

Kim, YW ;

Lee, JH .

JOURNAL OF APPLIED PHYSICS, 2003, 94 (04) :2563-2571

[4] Very low surface recombination velocities on p- and n-type silicon wafers passivated with hydrogenated amorphous silicon films [J].

Dauwe, S ;

Schmidt, J ;

Hezel, R .

CONFERENCE RECORD OF THE TWENTY-NINTH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE 2002, 2002, :1246-1249

[5] Experimental evidence of parasitic shunting in silicon nitride rear surface passivated solar cells [J].

Dauwe, S ;

Mittelstädt, L ;

Metz, A ;

Hezel, R .

PROGRESS IN PHOTOVOLTAICS, 2002, 10 (04) :271-278

[6] Effect of amorphous silicon carbide layer thickness on the passivation quality of crystalline silicon surface -: art. no. 202109 [J].

Ferre, R ;

Martín, I ;

Vetter, M ;

Garín, M ;

Alcubilla, R .

APPLIED PHYSICS LETTERS, 2005, 87 (20) :1-3

[7] ELECTRON-HOLE RECOMBINATION IN GERMANIUM [J].

HALL, RN .

PHYSICAL REVIEW, 1952, 87 (02) :387-387

[8] Plasma-assisted atomic layer deposition of TiN monitored by in situ spectroscopic ellipsometry [J].

Heil, SBS ;

Langereis, E ;

Kemmeren, A ;

Roozeboom, F ;

de Sanden, MCMV ;

Kessels, WMM .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2005, 23 (04) :L5-L8

[9] LOW-TEMPERATURE SURFACE PASSIVATION OF SILICON FOR SOLAR-CELLS [J].

HEZEL, R ;

JAEGER, K .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1989, 136 (02) :518-523

[10] Physical and electrical properties of noncrystalline Al2O3 prepared by remote plasma enhanced chemical vapor deposition [J].

Johnson, RS ;

Lucovsky, G ;

Baumvol, I .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2001, 19 (04) :1353-1360

← 1 2 →