Electric field effect in ultrathin black phosphorus

被引：1278

作者：

Koenig, Steven P. ^{[1
,2
]}

Doganov, Rostislav A. ^{[1
,2
,3
]}

Schmidt, Hennrik ^{[1
,2
]}

Castro Neto, A. H. ^{[1
,2
,3
]}

Oezyilmaz, Barbaros ^{[1
,2
,3
]}

机构：

[1] Natl Univ Singapore, Graphene Res Ctr, Singapore 117546, Singapore

[2] Natl Univ Singapore, Dept Phys, Singapore 117542, Singapore

[3] Natl Univ Singapore, Grad Sch Integrat Sci & Engn NGS, Singapore 117456, Singapore

来源：

APPLIED PHYSICS LETTERS | 2014年 / 104卷 / 10期

基金：

新加坡国家研究基金会;

关键词：

EFFECT TRANSISTORS; OPTICAL-PROPERTIES; SINGLE-CRYSTALS; HIGH-PRESSURES; RAMAN; HYSTERESIS; GAS; GPA;

D O I：

10.1063/1.4868132

中图分类号：

O59 [应用物理学];

学科分类号：

070305 [高分子化学与物理];

摘要：

Black phosphorus exhibits a layered structure similar to graphene, allowing mechanical exfoliation of ultrathin single crystals. Here, we demonstrate few-layer black phosphorus field effect devices on Si/SiO2 and measure charge carrier mobility in a four-probe configuration as well as drain current modulation in a two-point configuration. We find room-temperature mobilities of up to 300 cm(2)/Vs and drain current modulation of over 10(3). At low temperatures, the on-off ratio exceeds 10(5), and the device exhibits both electron and hole conduction. Using atomic force microscopy, we observe significant surface roughening of thin black phosphorus crystals over the course of 1 h after exfoliation. (C) 2014 AIP Publishing LLC.

引用

页数：4

共 37 条

[1]

Raman study of black phosphorus up to 13 GPa [J].