Dynamical properties near the metal-insulator transition:: Evidence for electron-assisted variable range hopping

被引：45

作者：

Marnieros, S ^{[1
]}

Bergé, L ^{[1
]}

Juillard, A ^{[1
]}

Dumoulin, L ^{[1
]}

机构：

[1] CNRS, IN2P3, CSNSM, F-91405 Orsay, France

来源：

PHYSICAL REVIEW LETTERS | 2000年 / 84卷 / 11期

关键词：

D O I：

10.1103/PhysRevLett.84.2469

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We report independent measurements (between 20 and 200 mK) of the electronic specific heat C-e,, the electron-phonon coupling Ge-phr and the electron-phonon relaxation time tau(e-ph) (from 10(-2) to 10(-5) s) for NbxSi1-x Anderson insulator thin films. We show that the usual equation tau(e-ph) = C-e/G(e-ph) holds only if the resistance is solely related to the electron temperature. We conclude that at sufficiently low temperatures Variable range hopping transport is assisted by electron-electron interactions alone and is independent of the phonon distribution.

引用

页码：2469 / 2472

页数：4

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