High resolution XPS studies of Se chemistry of a Cu(In, Ga)Se2 surface

被引：130

作者：

Canava, B

Vigneron, J

Etcheberry, A

Guillemoles, JF

Lincot, D

机构：

[1] Univ Versailles, Inst Lavoisier IREM, F-78035 Versailles, France

[2] ENSCP, Lab Electrochim & Chim Analyt, F-75231 Paris, France

来源：

APPLIED SURFACE SCIENCE | 2002年 / 202卷 / 1-2期

关键词：

CIGS; XPS; Se; surface; chemistry;

D O I：

10.1016/S0169-4332(02)00186-1

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Chemistry of co-evaporated Cu(In, Ga)Se-2 (CIGS) surfaces submitted or not to chemical treatments was investigated by high resolution XPS. The surface analysis allowed us to compare the surface composition with the bulk one as a function of the treatments. We also studied too several standard compounds as Cu2-xSe, In2Se3, ZnSe, Se-0 and CdSe. A Se XPS signal specific of the CIGS surfaces was identified. In this paper, we present a detailed study of Se signal in CIGS and show of the different spectroscopic contributions can be separated using standards information. Then, we discuss the chemical origin of these signals and the implications for the device processing. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：8 / 14

页数：7

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