Selective excitation and thermal quenching of the yellow luminescence of GaN

被引：26

作者：

Colton, JS ^{[1
]}

Yu, PY

Teo, KL

Weber, ER

Perlin, P

Grzegory, I

Uchida, K

机构：

[1] Univ Calif Berkeley, Dept Phys, Berkeley, CA 94720 USA

[2] Univ Calif Berkeley, Lawrence Berkeley Lab, Div Mat Sci, Berkeley, CA 94720 USA

[3] Natl Univ Singapore, Dept Elect Engn, Singapore 119260, Singapore

[4] Univ Calif Berkeley, Dept Mat Sci & Mineral Engn, Berkeley, CA 94720 USA

[5] Polish Acad Sci, High Pressure Res Ctr, UNIPRESS, PL-01142 Warsaw, Poland

[6] Univ Electrocommun, Dept Commun & Syst, Chofu, Tokyo 182, Japan

来源：

APPLIED PHYSICS LETTERS | 1999年 / 75卷 / 21期

关键词：

D O I：

10.1063/1.125322

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report the observation of narrower structures in the yellow luminescence of bulk and thin-film n-type GaN, using the technique of selective excitation. These fine structures exhibit thermal quenching associated with an activated behavior. We attribute these fine structures to phonons and electronic excitations of a shallow donor-deep acceptor complex, and determine its activation energy for delocalization. Our results suggest that in addition to distant donor-acceptor pairs, the yellow luminescence can also involve emission complexes of shallow donors and deep acceptors. (C) 1999 American Institute of Physics. [S0003-6951(99)04347-8].

引用

页码：3273 / 3275

页数：3

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