A comparison of focused ion beam and electron beam induced deposition processes

被引:39
作者
Lipp, S
Frey, L
Lehrer, C
Demm, E
Pauthner, S
Ryssel, H
机构
[1] UNIV ERLANGEN NURNBERG,LEHRSTUHL ELEKTRON BAUELEMENTE,D-91058 ERLANGEN,GERMANY
[2] SIEMENS AG,BEREICH HALBLEITER,D-81541 MUNICH,GERMANY
来源
MICROELECTRONICS AND RELIABILITY | 1996年 / 36卷 / 11-12期
关键词
D O I
10.1016/0026-2714(96)00196-5
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Focused ion and electron beams are used for local deposition of conducting or insulating films. Major applications are integrated circuit design edit, prototype modification, repair of masks, and machining of microsystems. In this paper, the dependence of the deposition rates versus the beam parameters for both, ion beam and electron beam induced deposition were investigated and compared with each other. At the same time, a more precise consideration of the influence of secondary electrons on the deposition process was accomplished. Copyright (C) 1996 Elsevier Science Ltd
引用
收藏
页码:1779 / 1782
页数:4
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