Studies of heteroepitaxial growth of thin II-VI semiconductor layers by sequential ultrahigh vacuum dosing

被引:14
作者
Luo, Y [1 ]
Han, M [1 ]
Slater, DA [1 ]
Osgood, RM [1 ]
机构
[1] Columbia Univ, Columbia Radiat Lab, New York, NY 10027 USA
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 2000年 / 18卷 / 02期
关键词
D O I
10.1116/1.582206
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
An in situ molecular-level study of material growth using a binary reaction sequence of hydride and metalorganic precursors is presented. The study used a model material system of CdS/ZnSe(100) and focused on the material chemistry of heteroepitaxy growth. In the growth process, dimethylcadmium and H2S precursors were sequentially dosed onto a c(2 x 2) ZnSe(100) substrate under high-vacuum conditions. At temperatures of similar to 300 K, saturated chemisorption of a Cd and a S monolayer occurred during each cycle of the binary reaction sequence. Characterization of the growth surface was accomplished in the growth chamber using Auger electron spectroscopy, x-ray photoelectron spectroscopy and low-energy ion scattering spectroscopy fbr probing surface chemical composition and low-energy electron diffraction for determining surface order. These measurements showed layer-by-layer growth at a substrate temperature of similar to 300 K, yielding on ordered stoichiometric CdS film. Strong variations in the composition of the grown surface layer were observed at different substrate temperatures: these variations were found to be related to the temperature dependence of the precursor reactions with the growth surfaces. (C) 2000 American Vacuum Society. [S0734-2101(00)01802-9].
引用
收藏
页码:438 / 449
页数:12
相关论文
共 43 条
[1]  
BALL CAB, 1983, DISLOCATIONS SOLIDS, V6, P121
[2]  
BRIGGS D, 1983, PRACTICAL SURFACE AN
[3]   CRITICAL THICKNESS IN EPITAXIAL CDTE/ZNTE [J].
CIBERT, J ;
GOBIL, Y ;
DANG, LS ;
TATARENKO, S ;
FEUILLET, G ;
JOUNEAU, PH ;
SAMINADAYAR, K .
APPLIED PHYSICS LETTERS, 1990, 56 (03) :292-294
[4]  
DAVIS LE, 1978, HDB AUGER ELECT SPEC
[5]   ADSORPTION AND ELECTRON-STIMULATED DESORPTION OF NH3/TIO2(110) [J].
DIEBOLD, U ;
MADEY, TE .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1992, 10 (04) :2327-2336
[6]  
DILLON AC, 1994, MATER RES SOC SYMP P, V335, P335
[7]  
Feldman L. C., 1986, Fundamentals of Surface and Thin Film Analysis
[8]   Surface chemistry for atomic layer growth [J].
George, SM ;
Ott, AW ;
Klaus, JW .
JOURNAL OF PHYSICAL CHEMISTRY, 1996, 100 (31) :13121-13131
[9]   ATOMIC LAYER CONTROLLED DEPOSITION OF SIO2 AND AL2O3 USING ABAB - BINARY REACTION SEQUENCE CHEMISTRY [J].
GEORGE, SM ;
SNEH, O ;
DILLON, AC ;
WISE, ML ;
OTT, AW ;
OKADA, LA ;
WAY, JD .
APPLIED SURFACE SCIENCE, 1994, 82-3 :460-467
[10]   An investigation of the surface reaction mechanisms of alternating-grown, ordered atomic layers: CdS on ZnSe(100) [J].
Han, M ;
Luo, Y ;
Moryl, JE ;
Osgood, RM .
SURFACE SCIENCE, 1999, 425 (2-3) :259-275