Simulation of SiC deposition in a fiber coating CVD reactor

被引:1
作者
Alam, MK [1 ]
Graham, G [1 ]
机构
[1] OHIO UNIV,STOCKER ENGN CTR,DEPT MECH ENGN,ATHENS,OH 45701
关键词
D O I
10.1080/10426919608947529
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
A simulation was carried out to study the Chemical Vapor Deposition (CVD) of SiC on a thin cylindrical substrate in a hot wall reactor. The results of this simulation are expected to apply to the process of fiber coating for interface control in fiber reinforced composites. The reactant in this study is methyltrichlorosilane (CH3SiCl3) in a background of hydrogen. The simulation was carried out using a commercial code (FLUENT). The simulation results compared well with experimental data from a hot wall reactor. It was determined that the temperature profiles tend to be uniform in the radial direction, and the deposition process is dominated by reaction kinetics.
引用
收藏
页码:821 / 835
页数:15
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