Post-implantation of ions into amorphous carbon films

被引:4
作者
Kolitsch, A
Summchen, L
Ullmann, J
Falke, U
Heger, P
机构
[1] TECH UNIV DRESDEN,INST ANALYT CHEM,D-01069 DRESDEN,GERMANY
[2] TECH UNIV CHEMNITZ ZWICKOU,INST PHYS,D-09126 CHEMNITZ,GERMANY
关键词
ion implantation; amorphous carbon; electron energy loss spectroscopy; Raman spectroscopy;
D O I
10.1016/S0257-8972(95)02791-2
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Hard amorphous carbon films were prepared by ion-beam- assisted evaporation on silicon wafers. The effect of post-implantation (20 keV, 200 keV) with film-forming carbon species and non-film-forming inert neon ions was studied as a function of the implanted fluence. In order to establish ion-induced changes in the mechanical and structural properties, the as-deposited and post-implanted films were characterized by ultramicrohardness measurements, Raman spectroscopy and electron energy loss spectroscopy. A significant improvement of the hardness was found, correlated with sp(2) to sp(3) transformation, by implantation of 20 keV carbon ions.
引用
收藏
页码:495 / 499
页数:5
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