Improvement of junction leakage of nickel silicided junction by a Ti-capping layer

被引：47

作者：

Hou, TH ^{[1
]}

Lei, TF

Chao, TS

机构：

[1] Natl Chiao Tung Univ, Dept Elect Engn, Hsinchu 300, Taiwan

[2] Natl Chiao Tung Univ, Inst Elect, Hsinchu 300, Taiwan

[3] Natl Nano Device Lab, Hsinchu 300, Taiwan

来源：

IEEE ELECTRON DEVICE LETTERS | 1999年 / 20卷 / 11期

关键词：

junction leakage; nickel silicide; titanium;

D O I：

10.1109/55.798047

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A novel NiSi process with a thin Ti-cap layer is proposed, for the first time, to improve the leakage problem of Ni-silicided junction, The Ti-cap samples exhibit a very low leakage current density about 1 x 10 A/cm(2) after 600 degrees C annealing, which is one order of magnitude reduction comparing with uncapped samples. From Anger analyzes, it is found that this significant improvement results from suppression of the oxidation of the Ni-silicide during the thermal annealing process.

引用

页码：572 / 573

页数：2

共 5 条

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