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Lateral migration of trapped holes in a nitride storage flash memory cell and its qualification methodology

被引：15
作者：
Zous, NK
Lee, MY
Tsai, WJ
Kuo, A
Huang, LT
Lu, TC
Liu, CJ
Wang, TH
Lu, WP
Ting, WC
Ku, J
Lu, CY
机构：
[1] Macronix Int Co Ltd, Hsinchu, Taiwan
[2] Natl Chiao Tung Univ, Dept Elect Engn, Hsinchu, Taiwan
来源：
IEEE ELECTRON DEVICE LETTERS | 2004年 / 25卷 / 09期
关键词：
lateral migration; MXVAND; NBit; nitride storage; NROM; trapped hole;
D O I：
10.1109/LED.2004.833824
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The negative threshold voltage (V-t) shift of a nitride storage flash memory cell in the erase state will result in an increase in leakage current. By utilizing a charge pumping method, we found that trapped hole lateral migration is responsible for this V-t shift. Hole transport in nitride is characterized by monitoring gate induced drain leakage current and using a thermionic emission model. The hole emission induced V-t shift shows a linear correlation with bake time in a semi-logarithm plot and its slope depends on the bake temperature. Based on the result, an accelerated qualification method for the negative V-t drift is proposed.
引用
收藏
页码：649 / 651
页数：3
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