Transition from Mott insulator to superconductor in GaNb4Se8 and GaTa4Se8 under high pressure -: art. no. 126403

Electronic conduction in GaM4Se8 (M=Nb,Ta) compounds with the fcc GaMo4S8-type structure originates from hopping of localized unpaired electrons (S=1/2) among widely separated tetrahedral M-4 metal clusters. We show that under pressure these systems transform from Mott insulators to a metallic and superconducting state with T-C=2.9 and 5.8 K at 13 and 11.5 GPa for GaNb4Se8 and GaTa4Se8, respectively. The occurrence of superconductivity is shown to be connected with a pressure-induced decrease of the MSe6 octahedral distortion and simultaneous softening of the phonon associated with M-Se bonds.