Photonic crystal and quantum dot technologies for all-optical switch and logic device

被引:107
作者
Asakawa, Kiyoshi
Sugimoto, Yoshimasa
Watanabe, Yoshinori
Ozaki, Nobuhiko
Mizutani, Akio
Takata, Yoshiaki
Kitagawa, Yoshinori
Ishikawa, Hiroshi
Ikeda, Naoki
Awazu, Koichi
Wang, Xiaomin
Watanabe, Akira
Nakamura, Shigeru
Ohkouchi, Shunsuke
Inoue, Kuon
Kristensen, Martin
Sigmund, Ole
Borel, Peter Ingo
Baets, Roel
机构
[1] Univ Tsukuba, Ctr Tsukuba Adv Res Alliance, Tsukuba, Ibaraki 3058577, Japan
[2] Natl Inst Adv Ind Sci & Technol, Ultrafast Photon Device Lab, Tsukuba, Ibaraki 3058568, Japan
[3] Natl Inst Adv Ind Sci & Technol, CANFOR, Tsukuba, Ibaraki 3058568, Japan
[4] Meijo Univ, Tenpaku Ku, Nagoya, Aichi 4688502, Japan
[5] NEC Corp Ltd, Basic & Environm Res Lab, Tsukuba, Ibaraki 3058501, Japan
[6] Chitose Inst Sci & Technol, Chitose 0668655, Japan
[7] Aarhus Univ, DK-8000 Aarhus C, Denmark
[8] Tech Univ Denmark, Dept Mech Engn, DK-2800 Lyngby, Denmark
[9] Tech Univ Denmark, Res Ctr COM, DK-2800 Lyngby, Denmark
[10] Univ Ghent, IMEC, Dept Informat Technol, B-9000 Ghent, Belgium
来源
NEW JOURNAL OF PHYSICS | 2006年 / 8卷
关键词
D O I
10.1088/1367-2630/8/9/208
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
Nano-photonic technologies of GaAs-based two-dimensional photonic crystal (2DPC) slab waveguides (WGs) and InAs-based quantum dots (QDs) are reviewed for a symmetrical Mach - Zehnder (SMZ) type, ultra-small and ultra-fast all-optical switch (PC-SMZ) and logic device. As the first phase, ultra-fast (similar to ps) and ultra-low energy (similar to 100 fJ) switching has been demonstrated using a chip 600 mu m x 300 mu m in size. The second phase is to create a PC-SMZ-based ultra-fast photonic logic switch with a latch function for a future ultra-fast photonic digital processor. One of the priority subjects is to establish a new design method, i.e., topology optimization (TO) method of 2DPC-WGs with wide/flat bandwidth, high transmittance and low reflectivity. Another one is to develop selective-area-grown, high-density and highly uniform InAs QDs with large optical nonlinearity (ONL) by using a metal-mask (MM) molecular beam epitaxy (MBE) growth method. Recent results regarding these two subjects encourage us to reach the final goal.
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页数:26
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