Large tunnel magnetoresistance in tunnel junctions with Co2MnSi/Co2FeSi multilayer electrode

被引：38

作者：

Ebke, D.

Schmalhorst, J. ^{[1
]}

Liu, N. -N.

Thomas, A.

Reiss, G.

Huetten, A.

机构：

[1] Univ Bielefeld, Dept Phys, D-33501 Bielefeld, Germany

[2] Res Ctr Karlsruhe, Inst Nanotechnol, D-76021 Karlsruhe, Germany

来源：

APPLIED PHYSICS LETTERS | 2006年 / 89卷 / 16期

关键词：

D O I：

10.1063/1.2363939

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Two kinds of magnetic tunnel junctions with Co2FeSi electrodes are compared. Using Co2FeSi single layers a tunnel magnetoresistance of 52% is reached, whereas the magnetization of the Co2FeSi is only 75% of the expected value. By using [Co2MnSi/Co2FeSi](x10) multilayer electrodes the magnetoresistance can be increased to 114% and the full bulk magnetization is reached. All junctions show an inverse tunnel magnetoresistance, when the electrons are tunneling from the Co-Fe into the Heusler compound electrode. This results from a special band structure feature of full Heusler compounds, which is robust even for atomic disorder in the films.

引用

页数：3

共 16 条

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