Field effects on electron conduction through self-assembled monolayers

被引:5
作者
Hwang, Gwo-Jen [1 ]
Jeng, Pei-Ren
Lien, Chenhsin
Chen, C. S.
Tsao, Yung-Shiang
Hwang, Hung-Shun
Xu, Sheng-Quan
Hong, T. M.
Chou, Y. C.
机构
[1] St Johns Univ, Holist Educ Ctr, Tamsui 251, Taiwan
[2] Natl Tsing Hua Univ, Dept Elect Engn, Hsinchu 30013, Taiwan
[3] Natl Tsing Hua Univ, Dept Phys, Hsinchu 30013, Taiwan
关键词
D O I
10.1063/1.2357883
中图分类号
O59 [应用物理学];
学科分类号
摘要
The electronic conduction through the self-assembled monolayer (SAM) can be modulated by the electric potential applied to the silicon gate electrode surrounding the SAM. The dependence of the current through SAM on the gate voltage can be explained that the renormalized molecular energy levels are swept through the window between the Fermi levels of the source and drain electrodes. The effects of the lowest unoccupied molecular orbital and a hybrid energy level near the Fermi level in the transmission spectrum can be identified. (c) 2006 American Institute of Physics.
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页数:3
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