Cu oxide nanowire array grown on Si-based SiO2 nanoscale islands via nanochannels

被引：16

作者：

Mei, YF ^{[1
]}

Siu, GG

Yang, Y

Fu, RKY

Hung, TF

Chu, PK

Wu, XL

机构：

[1] City Univ Hong Kong, Dept Phys & Mat Sci, Kowloon, Hong Kong, Peoples R China

[2] Nanjing Univ, Natl Lab Solid State Microstruct, Dept Phys, Nanjing 210093, Peoples R China

来源：

ACTA MATERIALIA | 2004年 / 52卷 / 17期

关键词：

nanostructures; chemical synthesis; semiconductor;

D O I：

10.1016/j.actamat.2004.07.010

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Cu oxide nanowire array on Si-based SiO2 nanoscale islands was fabricated via nanochannels of Si-based porous anodic alumina (PAA) template at room temperature under a pulse voltage in a conventional solution for copper electrodeposition. X-ray diffraction and X-ray photoelectron spectroscopy showed that the main composite of the oxide nanowire is CU2O. The nanowires had a preferential growth direction (1 1 1) and connected with the nanoscale SiO2 islands, which was confirmed by Transmission Electron Microscopy (TEM). Such Si-based nanostructure is useful in the nanoelectrics application. The growth mechanism of Cu oxide nanowires in Si-based PAA template was discussed. The formation Of CU2O is due to the alkalinity of the anodized solution. However, the oscillations of the potential and current during the experiment trend to bring on a small amount of copper and CuO in the nanowires. (C) 2004 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

引用

页码：5051 / 5055

页数：5

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