Electrical conduction in POxNyInz films deposited on InP

被引：1

作者：

Hbib, H

Bonnaud, O

机构：

[1] Groupe de Microélectronique et de Visualisation, Unité de Recherche associée au CNRS 1648, Université de Rennes I, Rennes Cédex, 35042, Campus de Beaulieu

来源：

PHILOSOPHICAL MAGAZINE LETTERS | 1997年 / 75卷 / 02期

关键词：

D O I：

10.1080/095008397179822

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A new thin-film insulator, PO(x)N(y)ln(2), has been fabricated from solid phosphorus oxynitride (PON) using a vacuum technique. Transport carrier phenomena through the POxNyInz insulator indicate a Poole-Frenkel mechanism. The breakdown field strength was more than 3 x 10(6) V cm(-1) and the low-field resistivity was about 1 x 10(13) Omega cm. The optical dielectric constant epsilon(opt) and the barrier height phi(b) calculated from plots of log(J/E) against E(1/2) and log(J) against 1/T were 5.41 and 1.35 eV respectively.

引用

页码：111 / 115

页数：5

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