Optical properties and carrier dynamics of self-assembled GaN/Al0.11Ga0.89N quantum dots

被引：5

作者：

Ke, W. C. ^{[1
]}

Fu, C. P.

Huang, C. C.

Ku, C. S.

Lee, L.

Chen, C. Y.

Tsai, W. C.

Chen, W. K.

Lee, M. C.

Chou, W. C.

Lin, W. J.

Cheng, Y. C.

机构：

[1] Natl Tsing Hua Univ, Dept Electrophys, Hsinchu 300, Taiwan

[2] Chung Shan Inst Sci & Technol, Tao Yuan 325, Taiwan

来源：

NANOTECHNOLOGY | 2006年 / 17卷 / 10期

关键词：

D O I：

10.1088/0957-4484/17/10/027

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

GaN quantum dots were grown on an Al0.11Ga0.89N buffer layer by using flow rate modulation epitaxy. The Stranski-Krastanov growth mode was identified by an atomic force microscopy study. The thickness of the wetting layer is about 7.2 monolayers. The temperature dependent photoluminescence studies showed that at low temperature the localization energy, which accounts for de-trapping of excitons, decreases with the reducing dot size. The decrease in emission efficiency at high temperature is attributed to the activation of carriers from the GaN dot to the nitrogen vacancy (VN) state of the Al0.11Ga0.89N barrier layer. The activation energy decreases with reducing dot size.

引用

页码：2609 / 2613

页数：5

共 29 条

[1] Quantitative characterization of GaN quantum-dot structures in AlN by high-resolution transmission electron microscopy [J].

Arlery, M ;

Rouvière, JL ;

Widmann, F ;

Daudin, B ;

Feuillet, G ;

Mariette, H .

APPLIED PHYSICS LETTERS, 1999, 74 (22) :3287-3289

[2] GaN quantum dot density control by rf-plasma molecular beam epitaxy [J].

Brown, J ;

Wu, F ;

Petroff, PM ;

Speck, JS .

APPLIED PHYSICS LETTERS, 2004, 84 (05) :690-692

[3] Synthesis of uniform GaN quantum dot arrays via electron nanolithography of D2GaN3 [J].

Crozier, PA ;

Tolle, J ;

Kouvetakis, J ;

Ritter, C .

APPLIED PHYSICS LETTERS, 2004, 84 (18) :3441-3443

[4] All-optical single-electron read-out devices based on GaN quantum dots [J].

D'Amico, I ;

Fossi, F .

APPLIED PHYSICS LETTERS, 2002, 81 (27) :5213-5215

[5] GaN quantum dot based quantum information/computation processing [J].

D'Amico, I ;

Biolatti, E ;

Rossi, F ;

DeRinaldis, S ;

Rinaldis, R ;

Cingolani, R .

SUPERLATTICES AND MICROSTRUCTURES, 2002, 31 (2-4) :117-125

[6] From visible to white light emission by GaN quantum dots on Si(111) substrate [J].

Damilano, B ;

Grandjean, N ;

Semond, F ;

Massies, J ;

Leroux, M .

APPLIED PHYSICS LETTERS, 1999, 75 (07) :962-964

[7] Intrinsic exciton-exciton coupling, in GaN-based quantum dots: Application to solid-state quantum computing [J].

De Rinaldis, S ;

D'Amico, I ;

Biolatti, E ;

Rinaldi, R ;

Cingolani, R ;

Rossi, F .

PHYSICAL REVIEW B, 2002, 65 (08) :1-4

[8] Excitonic properties of strained wurtzite and zinc-blende GaN/AlxGa1-xN quantum dots [J].

Fonoberov, VA ;

Balandin, AA .

JOURNAL OF APPLIED PHYSICS, 2003, 94 (11) :7178-7186

[9] Well width dependence of disorder effects on the optical properties of AlGaN/GaN quantum wells [J].

Friel, I ;

Thomidis, C ;

Moustakas, TD .

APPLIED PHYSICS LETTERS, 2004, 85 (15) :3068-3070

[10] Temperature-induced delocalization of excitations in GaAs/AlAs type-II superlattices [J].

Gerlovin, IY ;

Dolgikh, YK ;

Ovsyankin, VV ;

Efimov, YP ;

Ignat'ev, IV ;

Novitskaya, EE .

PHYSICS OF THE SOLID STATE, 1998, 40 (06) :1041-1046

← 1 2 3 →