Electrical resistivity and specific heat studies of semiconducting states in Fe3-xVxAl

被引：14

作者：

Nishigori, S ^{[1
]}

Yamada, Y

Ito, T

Abe, H

Matsushita, A

机构：

[1] Shimane Univ, Dept Mat Sci, Matsue, Shimane 6903507, Japan

[2] Natl Res Inst Met, Tsukuba, Ibaraki 3050047, Japan

来源：

PHYSICA B | 2000年 / 281卷

关键词：

Heusler; electrical resistivity; specific heat; semiconducting state;

D O I：

10.1016/S0921-4526(99)00963-1

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The electrical resistivity rho and specific heal. C of Heusler-type Fe3-xVxAl (x = 1 and 1.05) were measured. p shows semiconductor-like negative temperature dependence down to the lowest temperature of 0.32K. With decreasing temperature C/T increases and marks a maximum at 0.5 and 1.0 K for x = 1 and 1.05, respectively, rho and the specific heat anomaly in these compounds cannot be attributed to a simple band gap. (C) 2000 Elsevier Science B.V. All rights reserved.

引用

页码：686 / 687

页数：2

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