Silicon inverse opal -: A platform for photonic bandgap research

被引:88
作者
Tétreault, N
Míguez, H
Ozin, GA
机构
[1] Univ Toronto, Dept Chem, Mat Chem Res Grp, Toronto, ON M5S 3H6, Canada
[2] Univ Politecn Valencia, Ctr Tecnol Nanofoton, E-46022 Valencia, Spain
关键词
D O I
10.1002/adma.200400618
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
This article focuses attention on recent research on the silicon inverse opal, the first self-assembled or bottom-up synthetic photonic crystal to exhibit a complete photonic bandgap (PBG) at 1.5 mum([1]) in accordance with theoretical predictions.([2]) The silicon inverse opal has since proven to be a useful platform for assembling on-chip films([3]) and in-chip patterns,([4]) engineering extrinsic defects,([5]) mapping photon density of states,([6]) switching light with light, and inhibiting spontaneous emission.([7]) Also, new and exciting colloidal-crystal-based structures are being developed based on experimental and theoretical knowledge acquired for the synthesis of inverted silicon photonic crystals.([8-10]) It has also inspired the idea of the silicon inverse opal heterostructure, a theoretical construct that could enable an all-optical microchip for single mode diffractionless waveguiding of light in air throughout a bandwidth of more than 70 nm at 1.5 mum.([11]).
引用
收藏
页码:1471 / 1476
页数:6
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